| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HM62256BLP-7 | 32768-word x 8-bit high speed CMOS static RAM, 70ns | distributor | DIP | 28 | 0°C | 70°C | 143 K |
| HM62256BLP-7SL | 32768-word x 8-bit high speed CMOS static RAM, 70ns | distributor | DIP | 28 | 0°C | 70°C | 143 K |
| HM628512BLPI-8 | 4M SRAM (512-kword x 8-bit), 85ns access time | distributor | plastic DIP | 32 | -40°C | 85°C | 84 K |
| ISL9N7030BLP3 | 30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET® Trench Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 197 K |
| KM681000BLP-5 | 128K x 8 bit CMOS static RAM, 55ns, low power | Samsung-Electronic | DIP | 32 | 0°C | 70°C | 192 K |
| KM681000BLP-5L | 128K x 8 bit CMOS static RAM, 55ns, low low power | Samsung-Electronic | DIP | 32 | 0°C | 70°C | 192 K |
| KM681000BLP-7 | 128K x 8 bit CMOS static RAM, 70ns, low power | Samsung-Electronic | DIP | 32 | 0°C | 70°C | 192 K |
| KM681000BLP-7L | 128K x 8 bit CMOS static RAM, 70ns, low low power | Samsung-Electronic | DIP | 32 | 0°C | 70°C | 192 K |
| KM684000BLP-5 | 512Kx8 bit CMOS static RAM, 55ns | Samsung-Electronic | DIP | 32 | 0°C | 70°C | 171 K |
| KM684000BLP-7 | 512Kx8 bit CMOS static RAM, 70ns | Samsung-Electronic | DIP | 32 | 0°C | 70°C | 171 K |
| [1] [2] 3 [4] |
|---|
