Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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HM514400BLS-6 | 1,048,576-word x 4-bit dynamic random access memory, 60ns | distributor | SOJ | 20 | 0°C | 70°C | 235 K |
HM514400BLS-7 | 1,048,576-word x 4-bit dynamic random access memory, 70ns | distributor | SOJ | 20 | 0°C | 70°C | 235 K |
HM514400BLS-8 | 1,048,576-word x 4-bit dynamic random access memory, 80ns | distributor | SOJ | 20 | 0°C | 70°C | 235 K |
HM62256BLSP-7 | 32768-word x 8-bit high speed CMOS static RAM, 70ns | distributor | DIP | 28 | 0°C | 70°C | 143 K |
HM62256BLSP-7 | 32768-word x 8-bit high speed CMOS static RAM, 70ns | distributor | DIP | 28 | 0°C | 70°C | 143 K |
ISL9N7030BLS3ST | 30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET® Trench Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 197 K |
UT62W256BLS-35LL | Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM | distributor | STSOP | 28 | 0°C | 70°C | 164 K |
UT62W256BLS-70L | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM | distributor | STSOP | 28 | 0°C | 70°C | 164 K |
UT62W256BLS-70LL | Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM | distributor | STSOP | 28 | 0°C | 70°C | 164 K |
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