| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BS107 | 200V; 120mA N-channel enchancement mode transistor. Specially suited for telephone subsets | distributor | - | 3 | -55°C | 150°C | 61 K |
| BS107 | TMOS switching | Motorola | - | 3 | -55°C | 150°C | 76 K |
| BS107 | 200 V, N-channel enhancement mode vertical D-MOS transistor | Philips-Semiconductors | - | 3 | - | - | 65 K |
| BS107 | N-channel enhancement mode vertical D-MOS transistor. Drain-source voltage 200 V. Drain current(DC) 150 mA. | Philips-Semiconductors | SOT54 | 3 | 0°C | 150°C | 77 K |
| BS107 | SIPMOS small-signal transistor | Infineon-formely-Siemens | - | 3 | -55°C | 150°C | 77 K |
| BS107A | TMOS switching | Motorola | - | 3 | -55°C | 150°C | 76 K |
| BS107A | 200 V, N-channel enhancement mode vertical D-MOS transistor | Philips-Semiconductors | - | 3 | - | - | 49 K |
| BS107P | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | - | 3 | -55°C | 150°C | 20 K |
| BS107P | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | - | 3 | -55°C | 150°C | 20 K |
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