Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BS616LV2020AC | 2.7-3.6V 70/100ns very low power/voltage CMOS SRAM 128K x 16 switchable | distributor | BGA | 48 | 0°C | 70°C | 249 K |
BS616LV2020AI | 2.7-3.6V 70/100ns very low power/voltage CMOS SRAM 128K x 16 switchable | distributor | BGA | 48 | -40°C | 85°C | 249 K |
BS616LV2020DC | 2.7-3.6V 70/100ns very low power/voltage CMOS SRAM 128K x 16 switchable | distributor | DICE | 48 | 0°C | 70°C | 249 K |
BS616LV2020DI | 2.7-3.6V 70/100ns very low power/voltage CMOS SRAM 128K x 16 switchable | distributor | DICE | 48 | -40°C | 85°C | 249 K |
BS616UV2021AC10 | 10ns ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable | distributor | BGA | 48 | 0°C | 70°C | 254 K |
BS616UV2021AC70 | 70ns ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable | distributor | BGA | 48 | 0°C | 70°C | 254 K |
BS616UV2021AI10 | 10ns ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable | distributor | BGA | 48 | -40°C | 85°C | 254 K |
SMJ320C40TABS60/10 | FLOATING-POINT DIGITAL SIGNAL PROCESSORS, MILITARY | Texas-Instruments | TAB | 324 | - | - | 1 M |
UHBS60-1 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 6 | -65°C | 200°C | 18 K |
UHBS60-2 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 6 | -65°C | 200°C | 18 K |
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