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| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|---|---|---|---|---|---|---|
| HYB3117800BSJ-50 | 2M x 8bit DRAM | Infineon-formely-Siemens | - | 28 | 0°C | 70°C | 178 K |
| HYB3117800BSJ-60 | 2M x 8bit DRAM | Infineon-formely-Siemens | - | 28 | 0°C | 70°C | 178 K |
| HYB5116160BSJ-50 | 1M x 16-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 272 K |
| HYB5116160BSJ-60 | 1M x 16-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 272 K |
| HYB5116160BSJ-70 | 1M x 16-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 272 K |
| HYB5117800BSJ-50 | 2M x 8bit DRAM | Infineon-formely-Siemens | - | 28 | 0°C | 70°C | 226 K |
| HYB5117800BSJ-60 | 2M x 8bit DRAM | Infineon-formely-Siemens | - | 28 | 0°C | 70°C | 226 K |
| HYB5117800BSJ-70 | 2M x 8bit DRAM | Infineon-formely-Siemens | - | 28 | 0°C | 70°C | 226 K |
| HYB5117805BSJ-50 | 2M x 8bit EDO-DRAM | Infineon-formely-Siemens | - | 28 | 0°C | 70°C | 176 K |
| HYB5117805BSJ-60 | 2M x 8bit EDO-DRAM | Infineon-formely-Siemens | - | 28 | 0°C | 70°C | 176 K |
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