| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MMBT5550 | 140 V, high voltage transistor NPN silicon | distributor | SOT | 3 | -55°C | 150°C | 84 K |
| MMBT5550 | 140 V, high voltage transistor NPN silicon | distributor | SOT | 3 | -55°C | 150°C | 84 K |
| MMBT5550LT1 | High voltage transistor | Motorola | - | 3 | -55°C | 150°C | 199 K |
| MMBT5550LT1 | High Voltage Transistor NPN | ON-Semiconductor | - | 3 | - | - | 199 K |
| MMBT5551 | NPN General Purpose Amplifier | Fairchild-Semiconductor | - | 3 | - | - | 500 K |
| MMBT5551LT1 | High voltage transistor | Motorola | - | 3 | -55°C | 150°C | 199 K |
| MMBT5551LT1 | High Voltage Transistor NPN | ON-Semiconductor | - | 3 | - | - | 199 K |
| MMBT5551LT3 | High Voltage Transistor NPN | ON-Semiconductor | - | 3 | - | - | 199 K |
| PMBT5550 | NPN high-voltage transistor | Philips-Semiconductors | SOT23 | - | - | - | 43 K |
| PMBT5551 | NPN high-voltage transistor | Philips-Semiconductors | SOT23 | - | - | - | 43 K |
| WMBT5551LT1 | NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 36 K |
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