Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BUL52A | Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications. | distributor | TO220 | 3 | 0°C | 150°C | 19 K |
BUL52AFI | 500V Vce, 6A Ic, 20MHz NPN bipolar transistor | Semelab-Plc- | TO220I | - | - | - | 63 K |
BUL52B | Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications. | distributor | TO220 | 3 | 0°C | 150°C | 19 K |
BUL52B | 400V Vce, 8A Ic, 20MHz NPN bipolar transistor | Semelab-Plc- | TO220 | - | - | - | 19 K |
BUL52BFI | 400V Vce, 8A Ic, 20MHz NPN bipolar transistor | Semelab-Plc- | TO220I | - | - | - | 18 K |
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