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BUZ900

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BUZ900N-channel power MOSFET for audio applications, 160Vdistributor-3-55°C150°C39 K
BUZ900DN-channel power MOSFET for audio applications, 160Vdistributor-3-55°C150°C40 K
BUZ900DPN-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.distributor-30°C150°C39 K
BUZ900PN-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.distributorTO24730°C150°C38 K
BUZ900PN-channel power MOSFET for audio applications, 160Vdistributor-3-55°C150°C38 K
BUZ900X4SN-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.distributorSOT22740°C150°C33 K
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