| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BYG50K | 800 V, controlled avalanche rectifier | Philips-Semiconductors | SOD | 2 | -65°C | 175°C | 41 K |
| BYG50K | 800 V, controlled avalanche rectifier | Philips-Semiconductors | SOD | 2 | -65°C | 175°C | 41 K |
| BYG50M | 1000 V, controlled avalanche rectifier | Philips-Semiconductors | SOD | 2 | -65°C | 175°C | 41 K |
| BYG80A | Ultra fast low-loss controlled avalanche rectifier. Repetitive peak reverse voltage 50 V. Average forward current 2.4 A. | Philips-Semiconductors | - | 2 | -65°C | 175°C | 174 K |
| BYG80C | Ultra fast low-loss controlled avalanche rectifier. Repetitive peak reverse voltage 150 V. Average forward current 2.4 A. | Philips-Semiconductors | - | 2 | -65°C | 175°C | 174 K |
| BYG80D | Ultra fast low-loss controlled avalanche rectifier. Repetitive peak reverse voltage 200 V. Average forward current 2.4 A. | Philips-Semiconductors | - | 2 | -65°C | 175°C | 174 K |
| BYG80F | Ultra fast low-loss controlled avalanche rectifier. Repetitive peak reverse voltage 300 V. Average forward current 2.3 A. | Philips-Semiconductors | - | 2 | -65°C | 175°C | 174 K |
| BYG90-30 | 30 V, schottky barrier rectifier diode | Philips-Semiconductors | SOD | 2 | - | - | 36 K |
| BYG90-40 | 40 V, schottky barrier rectifier diode | Philips-Semiconductors | SOD | 2 | - | - | 36 K |
| BYG90-40 | 40 V, schottky barrier rectifier diode | Philips-Semiconductors | SOD | 2 | - | - | 36 K |
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