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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BU406200 V, NPN silicon power transistordistributor-3-65°C150°C112 K
BU4067Ampere NPN power transistordistributor-3-65°C150°C106 K
BU406NPN power transistorMotorola-4-65°C150°C100 K
BU406NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V.Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--24 K
BU406D200 V, NPN silicon power transistordistributor-3-65°C150°C113 K
BU406D7Ampere NPN power transistordistributor-3-65°C150°C107 K
BU406DNPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 400V. Emitter-base voltage 6V.Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--22 K
BU406HNPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V.Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--24 K
KBU406600V, 4.0A bridge rectifierdistributorSIL4-65°C150°C42 K
KBU406600V, 4.0A bridge rectifierdistributorSIL4-65°C150°C42 K
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