Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
BZX55C120 | 120 V, 1 mA, 500 mW silicon zener diode | distributor | - | 2 | -55°C | 175°C | 28 K |
BZX85C120 | 120 V, 2.0 mA, 1.3 W silicon zener diode | distributor | - | 2 | -55°C | 175°C | 18 K |
IXUC120N10 | 100V trench power MOSFET Q-class | distributor | ISOPLUS220 | 3 | -55°C | 175°C | 56 K |
KM416C1204CJ-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
KM416C1204CJ-50 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
KM416C1204CJ-60 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
KM416C1204CJL-50 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
KM416C1204CJL-60 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
KM416C1204CTL-50 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 804 K |
KM416C1204CTL-60 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 804 K |
<< [13] [14] [15] [16] [17] 18 [19] [20] [21] [22] [23] >> |
---|