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C239

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2SC2396Small signal general purpose transistordistributor----24 K
2SC2396Small signal general purpose transistordistributor----24 K
BC239 NPN Epitaxial Silicon Transistor [Obsolete]Fairchild-Semiconductor-3--70 K
BC239NPN transistor for general purpose applications and low noise amplifier applicationsKorea-Electronics-Co--Ltd--3-55°C150°C140 K
BC239NPN silicon planar epitaxial transistordistributor-3-55°C150°C228 K
BC239NPN silicon amplifier transistorMotorola-3-55°C150°C112 K
BC239Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA.distributor-30°C150°C49 K
BC239CNPN silicon amplifier transistorMotorola-3-55°C150°C112 K
BC239CAmplifier Transistor NPNON-Semiconductor-3--83 K
HMC239S8SPDT switch DC 2.5 GHzdistributorSOIC8-40°C85°C139 K
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