| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BZT52-C30S | Surface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 30 V | distributor | - | 2 | -55°C | 150°C | 78 K |
| IRFBC30S | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 362 K |
| IRG4BC30S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 18A | International-Rectifier | - | 3 | -55°C | 150°C | 161 K |
| IRG4PC30S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 18A | International-Rectifier | - | 3 | -55°C | 150°C | 120 K |
| RC30S01G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 30 A. | distributor | - | - | -50°C | 150°C | 17 K |
| RC30S02G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 30 A. | distributor | - | - | -50°C | 150°C | 17 K |
| RC30S04G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 30 A. | distributor | - | - | -50°C | 150°C | 17 K |
| RC30S06G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 30 A. | distributor | - | - | -50°C | 150°C | 17 K |
| RC30S08G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 800 V. Max average forward current 30 A. | distributor | - | - | -50°C | 150°C | 17 K |
| RC30S10G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward current 30 A. | distributor | - | - | -50°C | 150°C | 17 K |
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