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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2SC351910Ampere high-power NPN silicon power transistordistributor-3-55°C150°C138 K
2SC3519A10Ampere high-power NPN silicon power transistordistributor-3-55°C150°C138 K
AS7C3513-10JC3.3V 32K x 16 CMOS SRAM, 10ns access timeAlliance-Semiconductor-Corporationplastic SOJ440°C70°C152 K
AS7C3513-10TC3.3V 32K x 16 CMOS SRAM, 10ns access timeAlliance-Semiconductor-CorporationTSOPII440°C70°C152 K
AS7C3513-12TC3.3V 32K x 16 CMOS SRAM, access time 12nsAlliance-Semiconductor-CorporationTSOPII440°C70°C198 K
AS7C3513-15JC3.3V 32K x 16 CMOS SRAM, access time 15nsAlliance-Semiconductor-Corporationplastic SOJ440°C70°C198 K
AS7C3513-15TC3.3V 32K x 16 CMOS SRAM, access time 15nsAlliance-Semiconductor-CorporationTSOPII440°C70°C198 K
AS7C3513-20JC3.3V 32K x 16 CMOS SRAM, access time 20nsAlliance-Semiconductor-Corporationplastic SOJ440°C70°C198 K
AS7C3513-20TC3.3V 32K x 16 CMOS SRAM, access time 20nsAlliance-Semiconductor-CorporationTSOPII440°C70°C198 K
HMC351S8High IP3 double- balanced mixer 0.7 - 1.1 GHzdistributorplastic8-55°C85°C141 K
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