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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
GM71C17800CLJ-5CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns, low powerdistributorSOJ280°C70°C92 K
GM71C17800CLJ-6CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low powerdistributorSOJ280°C70°C92 K
GM71C17800CLJ-7CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns, low powerdistributorSOJ280°C70°C92 K
GM71CS17800CLJ-7CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns, low powerdistributorSOJ280°C70°C92 K
GM71CS17800CLJ-7CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns, low powerdistributorSOJ280°C70°C92 K
GM71VS17403CLJ-5CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns, low powerdistributorSOJ240°C70°C99 K
GM71VS17403CLJ-6CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns, low powerdistributorSOJ240°C70°C99 K
KM68257CLJ-1232Kx8 bit high speed static RAM (5V operating), 12nsSamsung-ElectronicSOJ280°C70°C190 K
KM68257CLJ-1532Kx8 bit high speed static RAM (5V operating), 15nsSamsung-ElectronicSOJ280°C70°C190 K
KM68257CLJ-2032Kx8 bit high speed static RAM (5V operating), 20nsSamsung-ElectronicSOJ280°C70°C190 K
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