| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CM5000 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 50V. Max average forward current 50.0A | distributor | CM | 4 | -55°C | 150°C | 40 K |
| CM5001 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward current 50.0A | distributor | CM | 4 | -55°C | 150°C | 40 K |
| CM5002 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward current 50.0A | distributor | CM | 4 | -55°C | 150°C | 40 K |
| CM5004 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 400V. Max average forward current 50.0A | distributor | CM | 4 | -55°C | 150°C | 40 K |
| CM5008 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 800V. Max average forward current 50.0A | distributor | CM | 4 | -55°C | 150°C | 40 K |
| CM50MD-12H | 50A IGBT module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 21 | -40°C | 150°C | 149 K |
| CM50MD1-12H | 50A IGBT module for medium power switching use, flat-base type, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 11 | -40°C | 150°C | 127 K |
| CM50TF-24H | 50 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 19 | -40°C | 150°C | 57 K |
| CM50TF-28H | 50 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 19 | -40°C | 150°C | 57 K |
| CM50TU-24F | 50A IGBT module for high power switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 17 | -40°C | 150°C | 81 K |
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