Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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GS882Z18BD-250 | 250MHz 6ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM | distributor | BGA | 165 | 0°C | 70°C | 1 M |
GS882Z18BD-250I | 250MHz 5.5ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM | distributor | BGA | 165 | -40°C | 85°C | 1 M |
GS882Z36BD-250 | 250MHz 6ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM | distributor | BGA | 165 | 0°C | 70°C | 1 M |
PALC22V10D-25DMB | Flash erasable, reprogrammable CMOS PAL device, 25ns | Cypress-Semiconductor | CERDIP | 24 | -55°C | 125°C | 332 K |
PALC22V10D-25JC | Flash erasable, reprogrammable CMOS PAL device, 25ns | Cypress-Semiconductor | PLCC | 28 | 0°C | 75°C | 332 K |
PALC22V10D-25JI | Flash erasable, reprogrammable CMOS PAL device, 25ns | Cypress-Semiconductor | PLCC | 28 | -40°C | 85°C | 332 K |
PALC22V10D-25KMB | Flash erasable, reprogrammable CMOS PAL device, 25ns | Cypress-Semiconductor | CERPACK | 24 | -55°C | 125°C | 332 K |
PALC22V10D-25LMB | Flash erasable, reprogrammable CMOS PAL device, 25ns | Cypress-Semiconductor | LCC | 28 | -55°C | 125°C | 332 K |
PALC22V10D-25PC | Flash erasable, reprogrammable CMOS PAL device, 25ns | Cypress-Semiconductor | DIP | 24 | 0°C | 75°C | 332 K |
PALC22V10D-25PI | Flash erasable, reprogrammable CMOS PAL device, 25ns | Cypress-Semiconductor | DIP | 24 | -40°C | 85°C | 332 K |
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