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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FQD10N20200V N-Channel MOSFETFairchild-Semiconductor----787 K
FQD10N20L200V LOGIC N-Channel MOSFETFairchild-Semiconductor----576 K
HGTD10N40F110A, 400V and 500V N-Channel IGBTsIntersil-Corporation----33 K
HGTD10N40F1S10A, 400V and 500V N-Channel IGBTsIntersil-Corporation----33 K
HGTD10N50F1S10A, 400V and 500V N-Channel IGBTsIntersil-Corporation----33 K
PHD10N10EPowerMOS transistorPhilips-SemiconductorsSOT428---76 K
STD10NF06LN-CHANNEL 60V 0.1 OHM 10A DPAK STRIPFET II POWER MOSFETSGS-Thomson-Microelectronics----302 K
STD10NF10N-CHANNEL 100V - 0.115 OHM - 13A IPAK/DPAK LOW GATE CHARGE STRIPFET II POWER MOSFETSGS-Thomson-Microelectronics----462 K
VND10N06OMNIFET FULLY AUTOPROTECTED POWER MOSFETSGS-Thomson-Microelectronics----168 K
VND10N06-1OMNIFET FULLY AUTOPROTECTED POWER MOSFETSGS-Thomson-Microelectronics----168 K
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