Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SD1212 | NPN epitaxial planar silicon transistor, 30V/12A high-speed switching application | SANYO-Electric-Co--Ltd- | 2010B | 3 | - | - | 105 K |
2SD1213 | NPN epitaxial planar silicon transistor, 30V/20A high-speed switching application | SANYO-Electric-Co--Ltd- | 2022 | 3 | - | - | 100 K |
2SD1229 | NPN epitaxial planar silicon darlington transistor, driver application | SANYO-Electric-Co--Ltd- | 2022A | 3 | - | - | 107 K |
2SD1230 | NPN planar silicon darlington transistor, driver application | SANYO-Electric-Co--Ltd- | 2022A | 3 | - | - | 124 K |
2SD1230 | NPN planar silicon darlington transistor, driver application | SANYO-Electric-Co--Ltd- | 2022A | 3 | - | - | 124 K |
2SD1235 | NPN epitaxial planar silicon transistor, 30V/8A high-speed switching application | SANYO-Electric-Co--Ltd- | 2010B | 3 | - | - | 102 K |
2SD1236L | NPN epitaxial planar silicon transistor, 80V/5A switching application | SANYO-Electric-Co--Ltd- | 2010C | 3 | - | - | 126 K |
2SD1237L | NPN epitaxial planar silicon transistor, 80V/7A switching application | SANYO-Electric-Co--Ltd- | 2010B | 3 | - | - | 120 K |
2SD1238L | NPN epitaxial planar silicon transistor, 80V/12A switching application | SANYO-Electric-Co--Ltd- | 2022 | 3 | - | - | 94 K |
BSM15GD120D2 | 1200V/25A IGBT power module | Infineon-formely-Siemens | SIXPACK1 | 17 | - | - | 138 K |
[1] [2] [3] [4] [5] [6] 7 [8] [9] [10] |
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