Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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GNR25D122K | Varistor. Max allowable voltage: ACrms=750V, DC=980V. Varistor voltage 1080-1320V. | distributor | - | 2 | -40°C | 85°C | 57 K |
HD122 | 100V 4A NPN epitaxial silicon darlington transistor for medium power linear and switching applications | distributor | - | 3 | - | - | 40 K |
MDE-20D122K | 1200V; max peak current:75000A; metal oxide varistor. Standard D series 20mm disc | distributor | - | 2 | - | - | 77 K |
MDE-25D122K | 1200V; max peak current:18000A; metal oxide varistor. Standard D series 25mm disc | distributor | - | 2 | - | - | 87 K |
MDE-32D122K | 1200V; max peak current:25000A; metal oxide varistor. High energy series 32mm single disc | distributor | - | 2 | - | - | 75 K |
MDE-40D122K | 1200V; max peak current:40000A; metal oxide varistor. High energy series 40mm single disc | distributor | - | 2 | - | - | 82 K |
MDE-53D122K | 1200V; max peak current:70000A; metal oxide varistor. High energy series 53mm single disc | distributor | - | 2 | - | - | 74 K |
MJD122 | NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A | Fairchild-Semiconductor | - | 3 | -65°C | 150°C | 137 K |
MJD122-1 | NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A | Fairchild-Semiconductor | - | 3 | -65°C | 150°C | 137 K |
QRD1220T30 | 1200V, 200A fast recovery dual diode | distributor | - | - | - | - | 112 K |
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