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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
PHD12N10EPowerMOS transistorPhilips-SemiconductorsSOT428---79 K
PHD12NQ15TN-channel TrenchMOS transistorPhilips-SemiconductorsSOT428---111 K
RFD12N06RLE12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETsIntersil-Corporation----49 K
STD12N05N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----177 K
STD12N05LN-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----176 K
STD12N06N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----177 K
STD12N06LN-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----176 K
STD12N10LN-CHANNEL 100V - 0.12 OHM - 12A TO-252 LOW THRESHOLD POWER MOS TRANSISTORSGS-Thomson-Microelectronics----45 K
STD12NE06N-CHANNEL 60V - 0.08 OHM - 12A DPAK/IPAK SINGLE FEATURE SIZE POWER MOSFETSGS-Thomson-Microelectronics----107 K
STD12NE06LN-CHANNEL 60V - 0.09 OHM - 12A TO-251/TO-252 STRIPFET POWER MOSFETSGS-Thomson-Microelectronics----92 K
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