Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SD1381F | NPN silicon power transistor | ROHM | - | 3 | - | - | 89 K |
2SD1385 | Silicon NPN triple diffusion planer type small signal transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 37 K |
AD1380 | Low Cost 16-Bit Sampling ADC | Analog-Devices | - | - | - | - | 240 K |
BD138 | Plastic medium power silicon PNP transistor | Motorola | - | 3 | -55°C | 150°C | 104 K |
BD138 | PNP power transistors | Philips-Semiconductors | SOT32 | - | - | - | 44 K |
BD138 | PNP SILICON TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 44 K |
BD138-10 | PNP power transistors | Philips-Semiconductors | SOT32 | - | - | - | 44 K |
BD138-16 | PNP power transistors | Philips-Semiconductors | SOT32 | - | - | - | 44 K |
MD1382 | Ultra high sensivity gateable photomultiplier DC-module. 1/2 inche DC photosensor module. Window material quartz. Dark current/offset voltage 4pA/200microV @ 1 x 10^6 gain & 1V/20nA. | distributor | - | 5 | 5°C | 40°C | 357 K |
MD1383 | Ultra high sensivity gateable photomultiplier DC-module. 1/2 inche DC photosensor module. Window material UV glass. Dark current/offset voltage 4pA/200microV @ 1 x 10^6 gain & 1V/20nA. | distributor | - | 5 | 5°C | 40°C | 357 K |
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