Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SD1910 | Silicon diffused power transistor. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 100 K |
2SD1911 | Silicon diffused power transistor. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 100 K |
2SD1913 | 60V/3A low-frequency power amplifier applications | SANYO-Electric-Co--Ltd- | - | 3 | - | - | 34 K |
2SD1949 | 50V,0.5A medium power transistor | ROHM | - | - | - | - | 35 K |
MD1942 | Ultra high sensivity gateable photomultiplier DC-module. 3/4 inche DC photosensor module. Window material quartz. Dark current/offset voltage 30pA/1.5mV @ 1 x 10^6 gain & 1V/20nA. | distributor | - | 5 | 5°C | 40°C | 357 K |
RN5VD19AC | Voltage detector with output delay. Detector threshold 1.9V. Output type Nch open drain. Antistatic bag for samples | distributor | - | 5 | -40°C | 85°C | 198 K |
RN5VD19CA-TL | Voltage detector with output delay. Detector threshold 1.9V. Output type CMOS. Taping type TL | distributor | - | 5 | -40°C | 85°C | 198 K |
RN5VD19CC | Voltage detector with output delay. Detector threshold 1.9V. Output type CMOS. Antistatic bag for samples | distributor | - | 5 | -40°C | 85°C | 198 K |
SST58LD192-70-C-P1H | ATA-disc chip | Silicon-Storage-Technology-Inc- | PSDIP | 32 | 0°C | 70°C | 363 K |
SST58SD192-70-C-P1H | ATA-disc chip | Silicon-Storage-Technology-Inc- | PSDIP | 32 | 0°C | 70°C | 363 K |
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