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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2SD1910Silicon diffused power transistor.Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--100 K
2SD1911Silicon diffused power transistor.Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--100 K
2SD191360V/3A low-frequency power amplifier applicationsSANYO-Electric-Co--Ltd--3--34 K
2SD194950V,0.5A medium power transistorROHM----35 K
MD1942Ultra high sensivity gateable photomultiplier DC-module. 3/4 inche DC photosensor module. Window material quartz. Dark current/offset voltage 30pA/1.5mV @ 1 x 10^6 gain & 1V/20nA.distributor-55°C40°C357 K
RN5VD19ACVoltage detector with output delay. Detector threshold 1.9V. Output type Nch open drain. Antistatic bag for samplesdistributor-5-40°C85°C198 K
RN5VD19CA-TLVoltage detector with output delay. Detector threshold 1.9V. Output type CMOS. Taping type TLdistributor-5-40°C85°C198 K
RN5VD19CCVoltage detector with output delay. Detector threshold 1.9V. Output type CMOS. Antistatic bag for samplesdistributor-5-40°C85°C198 K
SST58LD192-70-C-P1HATA-disc chipSilicon-Storage-Technology-Inc-PSDIP320°C70°C363 K
SST58SD192-70-C-P1HATA-disc chipSilicon-Storage-Technology-Inc-PSDIP320°C70°C363 K
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