| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SD1950 | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 255 K |
| 2SD1950-T1 | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 255 K |
| 2SD1950-T2 | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 255 K |
| 2SD1957 | NPN power transistor, 120V, 7A | ROHM | - | 3 | -55°C | 150°C | 39 K |
| 2SD1958 | NPN triple diffused planar silicon transistor, TV horizontal deflection output, high-power switching application | SANYO-Electric-Co--Ltd- | 2041 | 3 | - | - | 80 K |
| AD1959YRS | 0.3-6V; PLL/multibit DAC. For DVD, CD, home theater systems, automotive audio systems, sampling musical keyboards | Analog-Devices | SOIC | 28 | -40°C | 105°C | 107 K |
| AD1959YRSRL | 0.3-6V; PLL/multibit DAC. For DVD, CD, home theater systems, automotive audio systems, sampling musical keyboards | Analog-Devices | SOIC | 28 | -40°C | 105°C | 107 K |
| CXD1958Q | MMDS TCM/QAM Demodulator + FEC + ADC | Sony-Semiconductor | - | - | - | - | 332 K |
| MD1952 | Ultra high sensivity gateable photomultiplier DC-module. 3/4 inche DC photosensor module. Window material quartz. Dark current/offset voltage 100pA/5mV @ 1 x 10^6 gain & 1V/20nA. | distributor | - | 5 | 5°C | 40°C | 357 K |
| MD1953 | Ultra high sensivity gateable photomultiplier DC-module. 3/4 inche DC photosensor module. Window material UV glass. Dark current/offset voltage 100pA/5mV @ 1 x 10^6 gain & 1V/20nA. | distributor | - | 5 | 5°C | 40°C | 357 K |
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