| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SD1964 | Silicon NPN epitaxial planar type power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 55 K |
| CXD1961AQ | DVB-S Frontend IC(QPSK demodulation+FEC) | Sony-Semiconductor | - | - | - | - | 294 K |
| CXD1961Q | DVB-S Front-end IC (QPSK demodulator + FEC) | Sony-Semiconductor | - | - | - | - | 217 K |
| MD1962 | Ultra high sensivity gateable photomultiplier DC-module. 3/4 inche DC photosensor module. Window material quartz. Dark current/offset voltage 300pA/15mV @ 1 x 10^6 gain & 1V/20nA. | distributor | - | 5 | 5°C | 40°C | 357 K |
| MD1963 | Ultra high sensivity gateable photomultiplier DC-module. 3/4 inche DC photosensor module. Window material UV glass. Dark current/offset voltage 300pA/15mV @ 1 x 10^6 gain & 1V/20nA. | distributor | - | 5 | 5°C | 40°C | 357 K |
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