Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SD1980 | Power transistor | ROHM | - | 3 | - | - | 67 K |
2SD1981 | NPN epitaxial planar silicon darlington transistor, driver application | SANYO-Electric-Co--Ltd- | 2006A | 3 | - | - | 70 K |
2SD1985A | Silicon NPN triple diffusion planar type power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 47 K |
MD1982 | Ultra high sensivity gateable photomultiplier DC-module. 3/4 inche DC photosensor module. Window material quartz. Dark current/offset voltage 10pA/500microV @ 1 x 10^6 gain & 1V/20nA. | distributor | - | 5 | 5°C | 40°C | 357 K |
MD1983 | Ultra high sensivity gateable photomultiplier DC-module. 3/4 inche DC photosensor module. Window material UV glass. Dark current/offset voltage 10pA/500microV @ 1 x 10^6 gain & 1V/20nA. | distributor | - | 5 | 5°C | 40°C | 357 K |
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