| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQD1N60 | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 543 K |
| FQD1N80 | 800V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 635 K |
| FQD1N80 | 800V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 635 K |
| HGTD1N120BNS | 5.3A, 1200V, NPT Series N-Channel IGBT | Fairchild-Semiconductor | - | - | - | - | 97 K |
| STD1NC60 | N-CHANNEL 600V 7 OHM 1.4A DPAK/IPAK POWERMESH II MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 280 K |
| STD1NC70Z | N-CHANNEL 700V 7.3 OHM 1.4A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED POWERMESH III MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 634 K |
| STD1NC70Z-1 | N-CHANNEL 700V 7.3 OHM 1.4A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED POWERMESH III MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 634 K |
| VND1NV04 | "OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 392 K |
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