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D2n60

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FQD2N60600V N-Channel MOSFETFairchild-Semiconductor----561 K
PHD2N60E600 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C76 K
PHD2N60EPowerMOS transistor. Avalanche energy rated.Philips-SemiconductorsSOT4283-55°C150°C94 K
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