| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CM10MD3-12H | 10A IGBT module for medium power switching use, flat-base type, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 11 | -40°C | 150°C | 377 K |
| CM15MD3-12H | 15A IGBT module for medium power switching use, flat-base type, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 11 | -40°C | 150°C | 164 K |
| CM20MD3-12H | 20A IGBT module for medium power switching use, flat-base type, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 11 | -40°C | 150°C | 139 K |
| CM30MD3-12H | 30A IGBT module for medium power switching use, flat-base type, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 11 | -40°C | 150°C | 135 K |
| MAX6305UK00D3-T | Multiple-input, programmable reset IC (open-drain reset output, 2 additional undervoltage reset inputs). Nominal timeout period 140ms. | Maxim-Integrated-Producs | - | 5 | 0°C | 70°C | 104 K |
| MAX6306UK50D3-T | Multiple-input, programmable reset IC (open-drain reset output, factory-set reset threshold on Vcc, 1 additional undervoltage reset input, manual reset input). Factory-trimmed reset thresholds: 4.875(min),5.125(max) Nominal timeout period 140ms. | Maxim-Integrated-Producs | - | 5 | 0°C | 70°C | 104 K |
| S-80739AN-D3-S | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80739AN-D3-T1 | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80739AN-D3-T2 | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80839ANNP-ED3-T2 | Low-voltage high-precision voltage detector | Seiko-Epson-Corporation | - | 4 | -40°C | 85°C | 1 M |
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