| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| D3SB40 | 400 V, 4 A, bridge rectifier | distributor | - | 4 | - | - | 55 K |
| D3SB60 | 600 V, 4 A, bridge rectifier | distributor | - | 4 | - | - | 55 K |
| D3SB60 | Single phase glass passivated SIP bridge rectifier. Max repetitive peak reverse voltage 600 V. Max average forward rectified current 4.0 A. | distributor | - | 4 | -55°C | 150°C | 16 K |
| D3SB80 | 800 V, 4 A, bridge rectifier | distributor | - | 4 | - | - | 55 K |
| D3SB80 | Single phase glass passivated SIP bridge rectifier. Max repetitive peak reverse voltage 800 V. Max average forward rectified current 4.0 A. | distributor | - | 4 | -55°C | 150°C | 16 K |
| HUF75925D3ST | 11A, 200V, 0.275 Ohm, N-Channel, UltraFET® Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 196 K |
| ISL9N2357D3ST | 30V, 0.007 Ohm, 35A, N-Channel UltraFET ® Trench Power MOSFET | Fairchild-Semiconductor | - | - | - | - | 260 K |
| ISL9N306AD3ST | N-Channel Logic Level PWM Optimized UltraFET R Trench Power MOSFETs 30V, 50A, 6mOhm | Fairchild-Semiconductor | - | - | - | - | 254 K |
| ISL9N307AD3ST | N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 189 K |
| ISL9N308AD3ST | N-Channel Logic Level UltraFET R Trench Power MOSFETs 30V, 50A, 8mOhm | Fairchild-Semiconductor | - | - | - | - | 273 K |
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