| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTD4N20E | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 268 K |
| RFD4N06L | Power dissipation 30 W Transistor polarity N Channel Current Id cont. 4 A Current Idm pulse 10 A Voltage Vgs th max. 2.5 V (I-Pak) Voltage Vds max 60 V Resistance Rds on 0.6 R Temperature current 25 ?C | Fairchild-Semiconductor | - | - | - | - | 38 K |
| RFD4N06L | 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 38 K |
| RFD4N06LSM | 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 38 K |
| STD4N25-1 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 142 K |
| STD4NA40 | TRANSISTOR MOSFET D-PAK | SGS-Thomson-Microelectronics | - | - | - | - | 169 K |
| STD4NA40-1 | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 169 K |
| STD4NB25 | N-CHANNEL 250V - 0.95 OHM - 4A - DPAK POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 67 K |
| STD4NB40 | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 62 K |
| STD4NC50 | N-CHANNEL 500V - 1.3 OHM - 3.7A - IPAK/DPAK POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 85 K |
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