| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| RFD4N06L | Power dissipation 30 W Transistor polarity N Channel Current Id cont. 4 A Current Idm pulse 10 A Voltage Vgs th max. 2.5 V (I-Pak) Voltage Vds max 60 V Resistance Rds on 0.6 R Temperature current 25 ?C | Fairchild-Semiconductor | - | - | - | - | 38 K |
| RFD4N06L | 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 38 K |
| RFD4N06LSM | 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 351 K |
| RFD4N06LSM | 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 38 K |
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