Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AD645 | Low Noise, Low Drift FET Op Amp | Analog-Devices | - | - | - | - | 439 K |
AD6458 | GSM 3V Receiver IF Subsystem for operation at input frequencies as high as 400 MHz and IFs from 5 MHz up to 50 MHz | Analog-Devices | - | - | - | - | 268 K |
AD6459 | GSM 3V Receiver IF Subsystem for operation at input frequencies as high as 500 MHz and IFs from 5 MHz up to 50 MHz | Analog-Devices | - | - | - | - | 314 K |
AD645JN | 18V; 500-750mW; low noise, low drift FET operational amplifier. For low noise photodiode preamps, CT scanners, precision I-V converters | Analog-Devices | DIP | 8 | 0°C | 70°C | 445 K |
BD645 | General purpose NPN Darlington transistor | Power-Innovations | - | - | - | - | 115 K |
CD645 | 0.8-1.0 volt general purpose silicon diode | distributor | - | - | -65°C | 175°C | 70 K |
UPD6450CX-002 | 12 line x 24 column on-screen character display CMOS LSI for VTR | NEC-Electronics-Inc- | PDIP | 18 | -20°C | 75°C | 1 M |
UPD6450GT-102 | 12 line x 24 column on-screen character display CMOS LSI for VTR | NEC-Electronics-Inc- | SOP | 20 | -20°C | 75°C | 1 M |
USD645 | Schottky Rectifier | Microsemi-Corporation | - | - | - | - | 87 K |
USD645C | Schottky Rectifier | Microsemi-Corporation | - | - | - | - | 88 K |
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