| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| RFD7N10LE | 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs | Intersil-Corporation | - | - | - | - | 361 K |
| RFD7N10LESM | 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs | Intersil-Corporation | - | - | - | - | 361 K |
| STD7NB20 | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 96 K |
| STD7NS20 | N-CHANNEL 200V - 0.35 OHM - 7A - DPAK MESH OVERLAY MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 53 K |
| STGD7NB120S-1 | N-CHANNEL 7A - 1200V IPAK POWERMESH IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 43 K |
| STGD7NB60H | N-CHANNEL 7A - 600V - DPAK POWERMESH IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 86 K |
| STGD7NB60H-1 | N-CHANNEL 7A - 600V IPAK POWERMESH IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 86 K |
| STGD7NB60S | N-CHANNEL 7A - 600V DPAK POWERMESH IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 85 K |
| VND7N04 | OMNIFET FULLY AUTOPROTECTED POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 146 K |
| VND7N04-1 | OMNIFET FULLY AUTOPROTECTED POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 146 K |
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