Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
FQD8N25 | 250V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 602 K |
MTD8N06E | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 185 K |
STD8N06 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 171 K |
STD8N10L | Power dissipation 45 W Transistor polarity N Channel Current Id cont. 8 A Current Idm pulse 32 A Voltage Vgs th max. 2.5 V Voltage Vds max 100 V Resistance Rds on 0.33 R Temperature current 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 381 K |
STD8N10L | Power dissipation 45 W Transistor polarity N Channel Current Id cont. 8 A Current Idm pulse 32 A Voltage Vgs th max. 2.5 V Voltage Vds max 100 V Resistance Rds on 0.33 R Temperature current 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 381 K |
STD8NS25 | N-CHANNEL 250V 0.38 OHM 8A DPAK MESH OVERLAY MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 122 K |
1 |
---|