| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BD911 | 100 V, complementary NPN silicon power transistor | distributor | - | 3 | -65°C | 150°C | 149 K |
| BD911 | 15Ampere complementary silicon plastic power transistor | distributor | - | 3 | -65°C | 150°C | 143 K |
| BD911 | COMPLEMENTARY SILICON POWER TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 97 K |
| GNR10D911K | Varistor. Max allowable voltage: ACrms=550V, DC=745V. Varistor voltage 819-1001V. | distributor | - | 2 | -40°C | 85°C | 60 K |
| GNR14D911K | Varistor. Max allowable voltage: ACrms=550V, DC=745V. Varistor voltage 819-1001V. | distributor | - | 2 | -40°C | 85°C | 60 K |
| GNR20D911K | Varistor. Max allowable voltage: ACrms=550V, DC=745V. Varistor voltage 819-1001V. | distributor | - | 2 | -40°C | 85°C | 60 K |
| GNR25D911K | Varistor. Max allowable voltage: ACrms=550V, DC=745V. Varistor voltage 819-1001V. | distributor | - | 2 | -40°C | 85°C | 57 K |
| GNR32D911K | Varistor. Max allowable voltage: ACrms=550V, DC=745V. Varistor voltage 819-1001V. | distributor | - | 2 | -40°C | 85°C | 79 K |
| IRFD9110 | 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 54 K |
| IRFD9110 | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -0.70 A | International-Rectifier | - | 4 | -55°C | 175°C | 173 K |
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