| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| JTDB75 | 75 W, 36 V, 960-1215 MHz common base transistor | distributor | 55AW | 3 | - | - | 230 K |
| K6T0808C1D-DB70 | 70ns, 32Kx8 bit low low power CMOS static RAM | Samsung-Electronic | DIP | 28 | 0°C | 70°C | 170 K |
| K6T1008C2E-DB70 | 128Kx8 bit, 70ns low low power CMOS static RAM | Samsung-Electronic | DIP | 32 | 0°C | 70°C | 190 K |
| K6T4008C1B-DB70 | 512Kx8 bit CMOS static RAM, Vcc range=4.5-5.5V, 70ns, LL-power | Samsung-Electronic | DIP | 32 | 0°C | 70°C | 171 K |
| K6T4008C1C-DB70 | 512Kx8 bit CMOS static RAM, Vcc range=4.5-5.5V, 70ns, LL-power | Samsung-Electronic | DIP | 32 | 0°C | 70°C | 125 K |
| NDB7060L | N-Channel Enhancement Mode Field Effect Transistor [Obsolete] | Fairchild-Semiconductor | - | - | - | - | 64 K |
| NDB7061 | N-Channel Enhancement Mode Field Effect Transistor [Obsolete] | Fairchild-Semiconductor | - | - | - | - | 360 K |
| NDB708A | N-Channel Enhancement Mode Field Effect Transistor [Life-time buy] | Fairchild-Semiconductor | - | - | - | - | 74 K |
| NDB710A | N-Channel Enhancement Mode Field Effect Transistor [Life-time buy] | Fairchild-Semiconductor | - | - | - | - | 74 K |
| UDB7.5 | High Voltage Rectifier | Microsemi-Corporation | DD | - | - | - | 148 K |
| [1] 2 |
|---|
