| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DBF10 | Diffused junction silicon diode, 1A single-phase bridge rectifier | SANYO-Electric-Co--Ltd- | 1210 | 4 | - | - | 38 K |
| DBF20 | Diffused junction silicon diode, 2A single-phase bridge rectifier | SANYO-Electric-Co--Ltd- | 1202 | 4 | - | - | 56 K |
| DBF20T | Diffused junction silicon diode, 2A single-phase bridge rectifier | SANYO-Electric-Co--Ltd- | 1202 | 4 | - | - | 44 K |
| DBF40 | Diffused junction silicon diode, 4A single-phase bridge rectifier | SANYO-Electric-Co--Ltd- | 1203 | 4 | - | - | 49 K |
| DBF40T | Diffused junction silicon diode, 4A single-phase bridge rectifier | SANYO-Electric-Co--Ltd- | 1203 | 4 | - | - | 49 K |
| DBF60 | Diffused junction silicon diode, 6A single-phase bridge rectifier | SANYO-Electric-Co--Ltd- | 1191 | 4 | - | - | 48 K |
| DBF60T | Diffused junction silicon diode, 6A single-phase bridge rectifier | SANYO-Electric-Co--Ltd- | 1191 | 4 | - | - | 43 K |
| MH32S72DBFA-7 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 941 K |
| MH32S72DBFA-8 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 941 K |
| MH8S72DBFD-7 | 603979776-bit (8388608-word by 72-bit) synchronous dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSSOP | 168 | 0°C | 70°C | 944 K |
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