| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AME1084DCBT | 5A low dropout positive voltage regulator | distributor | - | 3 | 0°C | 125°C | 108 K |
| AME1085DCBT | 3A low dropout positive voltage regulator | distributor | - | 3 | 0°C | 125°C | 103 K |
| AME1086DCBT | 1.5A low dropout positive voltage regulator | distributor | - | 3 | 0°C | 125°C | 103 K |
| AME1117DCBT | 1A low dropout positive voltage regulator | distributor | - | 3 | 0°C | 125°C | 128 K |
| DCB015 | Silicon epitaxial planar type, high-speed switching diode | SANYO-Electric-Co--Ltd- | 1169A | 3 | - | - | 45 K |
| K9F1208Q0A-DCB0 | 64M x 8 bit NAND flash memory, 1.70 - 1.95V | Samsung-Electronic | TBGA | 63 | 0°C | 70°C | 807 K |
| K9F1208U0A-DCB0 | 64M x 8 bit NAND flash memory, 2.7 - 3.6V | Samsung-Electronic | TBGA | 63 | 0°C | 70°C | 807 K |
| K9F1216Q0A-DCB0 | 32M x 16 bit NAND flash memory, 1.70 - 1.95V | Samsung-Electronic | TBGA | 63 | 0°C | 70°C | 807 K |
| K9F1216U0A-DCB0 | 32M x 16 bit NAND flash memory, 2.7 - 3.6V | Samsung-Electronic | TBGA | 63 | 0°C | 70°C | 807 K |
| K9F2808Q0B-DCB0 | 16M x 8 bit NAND flash memory, 1.7 - 1.9V | Samsung-Electronic | TBGA | 63 | 0°C | 70°C | 304 K |
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