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DF6

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
CEDF630N-channel enhancement mode field effect transistorChino-Excel-Technology-Corporation-3-65°C175°C502 K
CEDF640N-channel enhancement mode field effect transistorChino-Excel-Technology-Corporation-3-65°C175°C505 K
DF60AA1201200V diode (three phase bridge type)SanRex-Sansha-Electric-Mfg--Co--Ltd--5-40°C125°C276 K
DF60AA1601600V diode (three phase bridge type)SanRex-Sansha-Electric-Mfg--Co--Ltd--5-40°C125°C276 K
DF60BA40400V diode (three phase bridge type)SanRex-Sansha-Electric-Mfg--Co--Ltd--5-40°C125°C280 K
DF60BA80800V diode (three phase bridge type)SanRex-Sansha-Electric-Mfg--Co--Ltd--5-40°C125°C280 K
FDF60BA50500V diode moduleSanRex-Sansha-Electric-Mfg--Co--Ltd--5-40°C150°C359 K
FDF60BA60600V diode moduleSanRex-Sansha-Electric-Mfg--Co--Ltd--5-40°C150°C359 K
MMDF6N02HDR2TMOS dual N-channel field effect transistorMotorola-8-55°C150°C193 K
MMDF6N03HDR2TMOS dual N-channel field effect transistorMotorola-8-55°C150°C207 K
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