| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BCW60DLT1 | NPN silicon general purpose transistor | Motorola | - | 3 | -55°C | 150°C | 425 K |
| DLTS30 | Transient Voltage Suppressor | Microsemi-Corporation | DIP | - | - | - | 76 K |
| DLTS30A | Transient Voltage Suppressor | Microsemi-Corporation | DIP | - | - | - | 76 K |
| DLTS30C | Transient Voltage Suppressor | Microsemi-Corporation | DIP | - | - | - | 76 K |
| DLTS30CA | Transient Voltage Suppressor | Microsemi-Corporation | DIP | - | - | - | 76 K |
| DLTS5 | Transient Voltage Suppressor | Microsemi-Corporation | DIP | - | - | - | 76 K |
| DLTS5A | Transient Voltage Suppressor | Microsemi-Corporation | DIP | - | - | - | 76 K |
| DLTS8C | Transient Voltage Suppressor | Microsemi-Corporation | DIP | - | - | - | 76 K |
| DLTS8CA | Transient Voltage Suppressor | Microsemi-Corporation | DIP | - | - | - | 76 K |
| HM628128DLTS-5 | 1 M SRAM (128-kword x 8-bit), 55ns | distributor | TSOP I | 32 | -20°C | 70°C | 124 K |
| [1] 2 [3] [4] [5] [6] |
|---|
