| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AS8E128K32PN-120/883C | 128K x 32 EEPROM memory array | distributor | PGA | 66 | -55°C | 125°C | 392 K |
| AS8E128K32PN-140/883C | 128K x 32 EEPROM memory array | distributor | PGA | 66 | -55°C | 125°C | 392 K |
| AS8E128K32Q-15/IT | 128K x 32 EEPROM radiation tolerant memory array | distributor | CQFP | 68 | -40°C | 85°C | 181 K |
| AS8E128K32Q-15/XT | 128K x 32 EEPROM radiation tolerant memory array | distributor | CQFP | 68 | -55°C | 105°C | 181 K |
| VTE1281-1 | GaAlAs infrared emitting diode. Irradiance(typ) 3.3 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 32 K |
| VTE1281-2 | GaAlAs infrared emitting diode. Irradiance(typ) 6.5 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 32 K |
| VTE1281F | GaAlAs infrared emitting diode. Irradiance(typ) 0.21 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 24 K |
| VTE1281W-1 | GaAlAs infrared emitting diode. Irradiance(typ) 1.6 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 32 K |
| VTE1281W-2 | GaAlAs infrared emitting diode. Irradiance(typ) 3.3 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 32 K |
| XCCACE128-I | 128-Mbit ACE flash card. | distributor | CF type I | - | -40°C | 85°C | 1 M |
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