| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MA4E1339A-1141T | 20 V, Silicon medium barrier schottky diode | M-A-COM---manufacturer-of-RF | SOD | 2 | -55°C | 125°C | 118 K |
| MA4E1339A-1146T | 20 V, Silicon medium barrier schottky diode | M-A-COM---manufacturer-of-RF | SOT | 3 | -55°C | 125°C | 118 K |
| MA4E1339A-287T | 20 V, Silicon medium barrier schottky diode | M-A-COM---manufacturer-of-RF | SOT | 3 | -55°C | 125°C | 118 K |
| MA4E1339B-1146T | 20 V, Silicon medium barrier schottky diode | M-A-COM---manufacturer-of-RF | SOT | 3 | -55°C | 125°C | 118 K |
| MA4E1339B-287T | 20 V, Silicon medium barrier schottky diode | M-A-COM---manufacturer-of-RF | SOT | 3 | -55°C | 125°C | 118 K |
| MA4E1339E-1068T | 20 V, Silicon medium barrier schottky diode | M-A-COM---manufacturer-of-RF | SOT | 4 | -55°C | 125°C | 118 K |
| NTE133 | N-channel JFET silicon transistor. General purpose AF amplifier | distributor | - | 3 | -55°C | 150°C | 19 K |
| NTE1330 | Integrated circuit. Module - hybrid, dual, audio power amplifier, 15W/Ch, 2 power supplies required. | distributor | - | 16 | 0°C | 105°C | 21 K |
| NTE1331 | Integrated circuit. Module - dual, audio power amplifier, 25W/Channel, 2 power supplies required. | distributor | - | 16 | 0°C | 105°C | 20 K |
| NTE1331 | Integrated circuit. Module - dual, audio power amplifier, 25W/Channel, 2 power supplies required. | distributor | - | 16 | 0°C | 105°C | 20 K |
| QSE133 | Plastic Silicon Infrared Photosensor. Photodarlington | distributor | - | - | - | - | 148 K |
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