| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4E170811D-B | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 257 K |
| K4E170812D-B | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 257 K |
| K4E171611D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 553 K |
| K4E171611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung-Electronic | - | 50 | 0°C | 70°C | 553 K |
| K4E171611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung-Electronic | - | 44 | 0°C | 70°C | 553 K |
| K4E171612D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 553 K |
| K4E171612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung-Electronic | - | 50 | 0°C | 70°C | 553 K |
| K4E171612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung-Electronic | - | 44 | 0°C | 70°C | 553 K |
| MJE171 | Complementary plastic silicon power transistor | Motorola | - | 3 | -65°C | 150°C | 172 K |
| MJE172 | Complementary plastic silicon power transistor | Motorola | - | 3 | -65°C | 150°C | 172 K |
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