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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
K4E170811D-B2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.Samsung-ElectronicSOJ280°C70°C257 K
K4E170811D-F2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.Samsung-Electronic-280°C70°C257 K
K4E170812D-B2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.Samsung-ElectronicSOJ280°C70°C257 K
K4E170812D-F2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.Samsung-Electronic-280°C70°C257 K
P5KE170Transient Voltage SuppressorMicrosemi-Corporation----77 K
P6KE170Transient Voltage SuppressorMicrosemi-Corporation----83 K
P6KE170AZener transient voltage suppressor undirectional and bidirectionalMotorolaPDIP2-65°C175°C81 K
P6KE170ATransient Voltage SuppressorMicrosemi-Corporation----83 K
P6KE170CTransient Voltage SuppressorMicrosemi-Corporation----83 K
P6KE170CATransient Voltage SuppressorMicrosemi-Corporation----83 K
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