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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MJE18004NPN silicon power transistorMotorola-3-65°C150°C422 K
MJE18004Switchmode™ON-Semiconductor-3--422 K
MJE18004D2NPN silicon power transistorMotorola-3-65°C150°C466 K
MJE18004D2High speed, high gain bipolar NPN power transistorMotorola-4-65°C150°C466 K
MJE18004D2High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation NetworkON-Semiconductor-3--466 K

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