Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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GS8160E32T-150 | 7.5ns 150MHz 512K x 32 synchronous burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 784 K |
GS8160E32T-166 | 7ns 166MHz 512K x 32 synchronous burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 784 K |
GS8160E32T-200 | 6.5ns 200MHz 512K x 32 synchronous burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 784 K |
GS8160E32T-225 | 6ns 225MHz 512K x 32 synchronous burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 784 K |
GS8160E32T-250 | 5.5ns 250MHz 512K x 32 synchronous burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 784 K |
M1T1HT18PE32E | High speed flow-through 1-Mbit (32Kx32) standard 1T-SRAM memory macro | distributor | - | - | 0°C | 125°C | 162 K |
M1T1LT18FE32E | High speed flow-through 1-Mbit (32Kx32) standard 1T-SRAM memory macro | distributor | - | - | 0°C | 125°C | 193 K |
M1T2HT18FE32E | High speed flow-through 2-Mbit (64Kx32) standard 1T-SRAM memory macro | distributor | - | - | 0°C | 125°C | 169 K |
M1T2HT18PE32E | High speed pipelined 2-Mbit (64Kx32) standard 1T-SRAM memory macro | distributor | - | - | 0°C | 125°C | 171 K |
M1T2LT18FE32E | High speed flow-through 2-Mbit (64Kx32) standard 1T-SRAM memory macro | distributor | - | - | 0°C | 125°C | 203 K |
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