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E511

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
EDE5116GBSA-4A-E512M; DRR-II SDRAMdistributorBGA640°C70°C381 K
EDE5116GBSA-5A-E512M; DRR-II SDRAMdistributorBGA640°C70°C381 K
NTE5111AZener diode, 5 watt, +-5% tolerance. Nominal zener voltage Vz = 3.3V. Test current Izt = 380mA.distributor-2-65°C200°C32 K
NTE5112AZener diode, 5 watt, +-5% tolerance. Nominal zener voltage Vz = 3.6V. Test current Izt = 350mA.distributor-2-65°C200°C32 K
NTE5113AZener diode, 5 watt, +-5% tolerance. Nominal zener voltage Vz = 3.9V. Test current Izt = 320mA.distributor-2-65°C200°C32 K
NTE5114AZener diode, 5 watt, +-5% tolerance. Nominal zener voltage Vz = 4.3V. Test current Izt = 290mA.distributor-2-65°C200°C32 K
R3111E511A-TZLow voltage detector. Detector threshold (-Vdet) 5.1V. Output type: Nch open drain.distributor-3-40°C85°C205 K
R3111E511C-TZLow voltage detector. Detector threshold (-Vdet) 5.1V. Output type: CMOSdistributor-3-40°C85°C205 K
ST72E5111R9G0Bits number of 8 Memory type EPROM Microprocessor/controller features CAN 2.0B Controller/SPI/SCI/CAN Frequency clock 16 MHz Memory size 64 bytesSGS-Thomson-MicroelectronicsQFP64----
ST72E511R9G0SBits number of 8 Memory type EPROM Microprocessor/controller features CAN 2.0B Controller/LVD/SPI/SCI/CAN Frequency clock 16 MHz Memory size 64 K-bitSGS-Thomson-MicroelectronicsTQFP64----
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