| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| LC66E5316 | 4-bit single-chip microcontroller with 16 KB of on-chip EPROM | SANYO-Electric-Co--Ltd- | DIC52S | 52 | -30°C | 70°C | 201 K |
| LT1E53A | Chip LED device | Sharp | DIP | 4 | -25°C | 85°C | 89 K |
| MTE53N50E | ISOTOP TMOS E-FET power field effect transistor | Motorola | SOT | 4 | -40°C | 150°C | 167 K |
| NE532D | Dual Operational Amplifier | Philips-Semiconductors | SOT96 | - | - | - | 122 K |
| NE532N | Dual Operational Amplifier | Philips-Semiconductors | SOT97 | - | - | - | 122 K |
| NE532NB | Dual Operational Amplifier | Philips-Semiconductors | SOT97 | - | - | - | 122 K |
| P4KE530 | Transient Voltage Suppressor | General-Semiconductor | - | - | - | - | 37 K |
| SE532FE | Dual Operational Amplifier | Philips-Semiconductors | SOT151 | - | - | - | 122 K |
| SE532N | Dual Operational Amplifier | Philips-Semiconductors | SOT97 | - | - | - | 122 K |
| STE53NA50 | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 88 K |
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