| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| NTE5410 | Silicon controlled rectifier (SCR). 3 Amp sensitive gate. Repetitive peak reverse voltage Vrrm = 600V. | distributor | TO39 | 3 | -40°C | 100°C | 21 K |
| NTE5412 | Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 60V. | distributor | TO126 | 3 | -40°C | 110°C | 21 K |
| NTE5412 | Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 60V. | distributor | TO126 | 3 | -40°C | 110°C | 21 K |
| NTE5413 | Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 100V. | distributor | TO126 | 3 | -40°C | 110°C | 21 K |
| NTE5414 | Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 200V. | distributor | TO126 | 3 | -40°C | 110°C | 21 K |
| NTE5415 | Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 400V. | distributor | TO126 | 3 | -40°C | 110°C | 21 K |
| NTE5416 | Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 600V. | distributor | TO126 | 3 | -40°C | 110°C | 21 K |
| NTE5417 | Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 200V. RMS on-state current It = 10A. | distributor | TO220 | 3 | -40°C | 110°C | 18 K |
| R3111E541A-TZ | Low voltage detector. Detector threshold (-Vdet) 5.4V. Output type: Nch open drain. | distributor | - | 3 | -40°C | 85°C | 205 K |
| R3111E541C-TZ | Low voltage detector. Detector threshold (-Vdet) 5.4V. Output type: CMOS | distributor | - | 3 | -40°C | 85°C | 205 K |
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